Integrated Circuit Interconnect Lines on Lossy Silicon Substrate with Finite Element Method
نویسندگان
چکیده
The silicon substrate has a significant effect on the inductance parameter of a lossy interconnect line on integrated circuit. It is essential to take this into account in determining the transmission line electrical parameters. In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated using finite element method (FEM). We specifically illustrate the electrostatic modeling of single and coupled interconnected lines on a silicon-silicon oxide substrate. Also, we determine the quasi-static spectral for the potential distribution of the silicon-integrated circuit.
منابع مشابه
Finite Element Analysis of Integrated Circuit Interconnect Lines on Lossy Silicon Substrate
The silicon substrate has a significant effect on the inductance parameter of a lossy interconnect line on integrated circuit. It is essential to take this into account in determining the transmission line electrical parameters. In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated using finite element method (...
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